> Deep Silicon ICP Etcher

Manufacturier : Oxford Instruments


Role of the equipment

   The Plasmalab system 100 is a high density plasma etcher configured for the high aspect ratio etching of Silicon using either Bosch or cryogenic processes.


Technical specifications

• ICP 380 mm high density plasma source (2MHz, 5kW generator)
• 240 mm lower electrode with automatch unit (13.56MHz, 600 W)
• Variable height cooled/heated electrode (-150° C to 400° C)
• Wafer clamping and He backside cooling
• Sample holder: from pieces up to 200 mm wafers - 5'' plates
• Typical process pressure: 1 - 100 mtorr
• PC controlled and programmable recipes



• Fast MFCs for Bosch process with smooth sidewalls
• Available gas : SF6, C4F8, CF4, O2, H2
• Dual beam laser interferometry end point detector optimized for step detection
• Rapid loading (loadlock)
• Chamber cleaning done through an integrated recipe


Examples of available processes and services

• Anisotropic etching of 300 um deep trenches on silicon for the fabrication of MEMs devices
• Through wafer via processing

Academic | Private sector Rate :
80 $/h | 180 $/h



Deep anisotropic etching of Silicium (1.25um width 40um deep trenches on the left picture) obtained with a Bosch process for MEMS applications


Nanometric etching of Silicium (80nm width and 3um tall features) for NEMS applications 20nm pattern transfer onto Silicium for Nanoimprint applications