Home » Fiche technique » E-beam lithography, Raith EBPG5200Plus
The EBPG5200Plus is an e-beam lithography tool able to define and position patterns on a wafer with resolutions close to the nanometer on large surfaces.
• Acceleration voltage: 100 keV
• Current: 100 pA – 350 nA
• Field size: up to 1000 um
• Resolution: < 10 nm – Overlay accuracy: < 8 nm
• Overlay accuracy: < 8 nm
• Stiching accuracy : < 20 nm for 1 mm field size
• Writing speed : 125 MHz
• Addressing: 20 bits
• Available substrate holders :
– Wafers: 75 mm (3in), 100 mm (4in), 150 mm (6in) and 200 mm (8in)
– Photomasks: 125 mm (5in), 150 mm (6in) and 175 mm (7in)
– Pieces: 1 cm and more
• Automatic, dynamic off axis focus, stigmation and field distortion corrections
• Intelligent stage with 0.15 nm precision. Z-Lift stage for working with samples of different thickness or upon curved substrates
• Standard CAD formats like GDSII, DXF, etc… are accepted
• Proximity error correction available
• Photonic crystals
• Bragg gratings
• Photomask prototypes
• Master molds for nano-imprint