The thermal ALD system Veeco Savannah 100 allows deposition of HfO2, ZrO2, Al2O3, SnO2 and HfxZr1-xO2 layer having conformal film growth on high aspect ratio features.
• Sample size: up to 100mm (4”) wafer
• Substrate heating from 100°C to 300°C
• Precise control of film thickness from the nano-scale to the micro-scale.
• Tetrakis(dimethylamino)hafnium(IV) (TDMAH) for Hafnium Oxide
• Trimethylaluminum (TMA) for Aluminium Oxide
• Tetrakis(dimethylamino)zirconium(IV) (TDMAZ) for Zirconium Oxide
• Tetrakis(dimethylamido)tin(IV) (TDMASn) for Tin Oxide
• Both H2O and O3 as reactive oxidizer
