The ion implanter is used to introduce small quantities of ions in a chosen matrix of material. These ions are used to induce electrical, mechanical and/or magnetical changes on the physical properties of the target material.
• Modified Varian CF3000 implanter
• Energy: 1 keV to200 keV (400 keV for double charge)
• Medium current (up to 1 mA depending on species)
• Source: gas, solids, liquids (Bernas or Freeman)
• Sample holder:
– Sample size: 5mm to 150 mm
– Angle: 0 to 60 degrees (100 mm maximum size)
– Temperature: -150 to 500ºC (100 mm maximum size)
• Cassette to cassette system for 100 mm wafers
• Flood gun to neutralise charges
• Transistor source and drain implantation
• Implantation of silicon to produce nano crystals
• Anti-steam treatment
• Prothesis implantation for biocompatibility
• Modification of ferroelectrics
