The RTA is used to activate physical reactions (change film-to-film or film-to-wafer substrate interfaces, densify deposited films, activate dopants, , etc..) without allowing the appearance of slow phenomenon like thermal diffusion. This process also allow to grow very thin oxyde layers in a controlled manner.
• Quartz chamber
• Process controlled by programmable receipes
• Temperature ramping: up to 150ºC/s
• Maximum temperature: 1100ºC +/- 3ºC for 30 sec.
• Uniformity: better than 5% over 150 mm
• Available gas: O2, N2, Ar, H2
• Substrates: from small pieces up to 150 mm wafers
• Temperature reading by thermocouple or pyromter
• Ohmic contact annealing
• Oxynitride process
• Silicidation
• Thin film crystallisation
