Focused Ion beam and Scanning Electron Microscope (FIB/SEM)

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Model :

Focused Ion Beam (FIB) integrated with a Scanning Electron Microscope (SEM) for TEM sample preparation

Gas Injection System (GIS) for insulating or conducting layer deposition

Characterization by energy dispersive spectroscopy (EDS)

– Electron optics

• Electron gun: – High brightness Schottky emittor

– Accelarating voltage: 200 V à 30 kV

• Probe current: 10 pA à 15 nA

• Resolution: in SE mode: 1.2 nm à 30 kV and 3.0 nm à 3 kV

in BSE mode: 2.0 nm à 30 kV

• Magnification: 20x to 500,000x

– Ion optics

• Ion gun : Ga liquid metal

• Resolution : < 5 nm à 30 kV / < 2.5 nm à 30 kV (at the coïncidence point)

• Magnification : 150x to 250,000x

• Angle between MEB and FIB : 55°

• Accelerating voltage: 0.5 kV à 30 kV

• EDS : Quantax Bruker detector (X-Flash 6160) for elemetal analysis

• Gas Injection System (5-GIS from Orsayphysics) equipped with 5 precursors for deposition

• OmniProbe 200 nanomaipulator from Oxford Instrument

• TEM sample preparation

• Secondary (SE) and backscattering (BSE) electrons imaging

• Identification and quantification of the elements by EDS

Gold nanoparticles observed by High resolution Scanning Electron Microscopy using the Tescan LYRA 3 XMH