The Plasmalab system 100 is a high density plasma etcher configured for the etching of GaAs, InP, GaN, Al, Cr and related materials used in the fabrication of micro and nanoscale devices.
• ICP 380 mm high density plasma source (2MHz, 5kW generator)
• 240 mm lower electrode with automatch unit (13.56MHz, 600 W)
• Variable height cooled/heated electrode (-150° C to 400° C)
• Wafer clamping and He backside cooling
• Sample holder: from pieces up to 200 mm wafers – 5” plates
• Typical process pressure: 1- 100 mtorr
• PC controlled and programmable recipes
• Available gas : Cl2, O2, SiCl4, CH4, He, SF6, H2, N2, Ar
• Rapid loading (loadlock)
• Laser interferometry system for end point detection
• Chamber cleaning done through an integrated recipe
• Anisotropic etching of GaAs for the fabrication of optical waveguides
• Etching of photomasks used for UV lithography
