Electro-optical characterization of materials (thin films and bulk material)
• cw HeNe laser (632.8 nm), light source
• Fonction generator (240 MHz)
• Lock-in amplifier (200 MHz) to collect the modulated signal
• Oscilloscope
• Polariser set at 45° laser light polarization state
• Compensator and an output analyzer detect the modifaication of the initial 45° polarized light due to its interaction with the sample
• Silicon photodiode (5GHz), record the output signal
Evaluation of electro-optical coefficient of thin films (CBN, BST…)
