Role of the equipment
The Plasmalab system 100 is a Plasma Enhanced Chemical Vapor Depostion (PECVD) tool that allows deposition of multi-layers (Si, SiO2, SiN, SiC) on various substrates.
Technical specifications
• 13.56 MHz driven parallel plate reactor
• 240 mm electrodes with automatch unit
• Shower head gas inlet optimised for PECVD
• Sample holder: from pieces up to 200 mm wafers
• Typical process pressure: 1 - 300 mtorr
• Operating power : up to 600W
• PC controlled and programmable recipes
Accessories
• Low substrate temperatures (typ. 200° C) and up to 400° C
• Available gas : SiH4, N2, NH3, N2O, CF4, CH4, Ar, O2
• Variable height capability for lower electrode
• Frequency mixing capability (500W, 50kHz-460kHz on lower electrode) for stress-controlled deposition
• Liquid delivery source for use with TEOS
• Rapid loading (loadlock)
• Chamber cleaning controlled by optical emission of reactive species or etch by-products
Examples of available processes and services
• Deposition of SiOxNy with refractive index ranging from 1.46 to 2.20 controlled by gas flows
• Deposition of low stress SiC and SiOxNy films via frequency modulation
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Academic | Private sector Rate :
95 $/h | 220 $/h
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