> Atomic Layer Deposition (ALD)

Role of the equipment

The thermal ALD system Veeco Savannah 100 allows deposition of HfO₂, ZrO₂, Al₂O₃, SnO₂ and Hf_xZr_1-xO₂ layer having conformal film growth on high aspect ratio features.

Technical specifications

• Sample size: up to 100mm (4”) wafer
• Substrate heating from 100°C to 300°C
• Precise control of film thickness from the nano-scale to the micro-scale.

Available precursors

• Tetrakis(dimethylamino)hafnium(IV) (TDMAH) for Hafnium Oxide
• Trimethylaluminum (TMA) for Aluminium Oxide
• Tetrakis(dimethylamino)zirconium(IV) (TDMAZ) for Zirconium Oxide
• Tetrakis(dimethylamido)tin(IV) (TDMASn) for Tin Oxide
• Both H2O and O3 as reactive oxidizer
 

Tarif Académique | Industriel :
60 $/h | 135 $/h